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1

Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

Jungwoo Joh, Jesús A. del Alamo, Kurt Langworthy, Sujing Xie, Tsvetanka Zheleva

Journal:

Microelectronics Reliability

Année:

2011

Langue:

english

Fichier:

PDF, 1.23 MB

english, 2011

2

Deposition factors and band gap of zinc-blende AlN

Thompson, Margarita P., Auner, Gregory W., Zheleva, Tsvetanka S., Jones, Kenneth A., Simko, Steven J., Hilfiker, James N.

Journal:

Journal of Applied Physics

Année:

2001

Langue:

english

Fichier:

PDF, 724 KB

english, 2001

3

Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1−xN

Hanser, Andrew D, Nam, Ok-Hyun, Bremser, Michael D, Thomson, Darren B, Gehrke, Thomas, Zheleva, Tsvetanka S, Davis, Robert F

Journal:

Diamond and Related Materials

Année:

1999

Langue:

english

Fichier:

PDF, 1.02 MB

english, 1999

4

Lateral epitaxy and dislocation density reduction in selectively grown GaN structures

Tsvetanka S. Zheleva, Ok-Hyun Nam, Waeil M. Ashmawi, Jason D. Griffin, Robert F. Davis

Journal:

Journal of Crystal Growth

Année:

2001

Langue:

english

Fichier:

PDF, 900 KB

english, 2001

5

The formation of crystalline defects and crystal growth mechanism in InxGa1−xN/GaN heterostructure grown by metalorganic vapor phase epitaxy

Kawaguchi, Yasutoshi, Shimizu, Masaya, Yamaguchi, Masahito, Hiramatsu, Kazumasa, Sawaki, Nobuhiko, Taki, Wataru, Tsuda, Hidetaka, Kuwano, Noriyuki, Oki, Kensuke, Zheleva, Tsvetanka, Davis, Robert F

Journal:

Journal of Crystal Growth

Année:

1998

Langue:

english

Fichier:

PDF, 207 KB

english, 1998

6

Lateral epitaxial overgrowth of GaN films on SiO2areas via metalorganic vapor phase epitaxy

Ok-Hyun Nam, Tsvetanka S. Zheleva, Michael D. Bremser, Robert F. Davis

Journal:

Journal of Electronic Materials

Année:

1998

Langue:

english

Fichier:

PDF, 2.80 MB

english, 1998

7

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

Tsvetanka S. Zheleva, Scott A. Smith, Darren B. Thomson, Kevin J. Linthicum, Pradeep Rajagopal, Robert F. Davis

Journal:

Journal of Electronic Materials

Année:

1999

Langue:

english

Fichier:

PDF, 568 KB

english, 1999

8

Sublimation growth and characterization of bulk aluminum nitride single crystals

Cengiz M. Balkaş, Zlatko Sitar, Tsvetanka Zheleva, L. Bergman, R. Nemanich, R.F. Davis

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 537 KB

english, 1997

9

Optical and structural properties of lateral epitaxial overgrown GaN layers

Freitahs, Jaime A, nam, Ok-Hyun, Zheleva, Tsvetanka S, Davis, Robert F

Journal:

Journal of Crystal Growth

Année:

1998

Langue:

english

Fichier:

PDF, 140 KB

english, 1998

10

Transition layers at the SiO2/SiC interface

Zheleva, Tsvetanka, Lelis, Aivars, Duscher, Gerd, Liu, Fude, Levin, Igor, Das, Mrinal

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 811 KB

english, 2008

11

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Nam, Ok-Hyun, Bremser, Michael D., Zheleva, Tsvetanka S., Davis, Robert F.

Journal:

Applied Physics Letters

Année:

1997

Langue:

english

Fichier:

PDF, 1.78 MB

english, 1997

12

Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures

Zheleva, Tsvetanka S., Ashmawi, Waeil M., Nam, Ok-Hyun, Davis, Robert F.

Journal:

Applied Physics Letters

Année:

1999

Langue:

english

Fichier:

PDF, 568 KB

english, 1999

13

Epitaxial growth in large-lattice-mismatch systems

Zheleva, Tsvetanka, Jagannadham, K., Narayan, J.

Journal:

Journal of Applied Physics

Année:

1994

Langue:

english

Fichier:

PDF, 1.60 MB

english, 1994

14

Pressure response of the ultraviolet photoluminescence of ZnO and MgZnO nanocrystallites

Huso, Jesse, Morrison, John L., Hoeck, Heather, Chen, Xiang-Bai, Bergman, Leah, Jokela, S. J., McCluskey, M. D., Zheleva, Tsvetanka

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 490 KB

english, 2006

15

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Characterization of the origin of band states in the SiC/SiO2 interface

Biggerstaff, Trinity L., McClellan, Ryan D., Lelis, Aivars, Zheleva, Tsvetanka, Haney, Sarah, Agarwal, Anant., Windl, Wolfgang., Sanwu Wang,, Duscher, Gerd

Année:

2007

Langue:

english

Fichier:

PDF, 130 KB

english, 2007

16

Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors

Taillon, Joshua A., Hyuk Yang, Joon, Ahyi, Claude A., Rozen, John, Williams, John R., Feldman, Leonard C., Zheleva, Tsvetanka S., Lelis, Aivars J., Salamanca-Riba, Lourdes G.

Journal:

Journal of Applied Physics

Année:

2013

Langue:

english

Fichier:

PDF, 1.94 MB

english, 2013

17

Silver nanoplates with ground or metastable structures obtained from template-free two-phase aqueous/organic synthesis

Zhelev, Doncho V., Zheleva, Tsvetanka S.

Journal:

Journal of Applied Physics

Année:

2014

Langue:

english

Fichier:

PDF, 1.49 MB

english, 2014

18

MgZnO Nanocrystallites: Photoluminescence and Phonon Properties

Morrison, John L., Chen, Xiang-Bai, Huso, Jesse, Hoeck, Heather, Mitchell, James, Bergman, Leah, Zheleva, Tsvetanka

Journal:

MRS Proceedings

Année:

2005

Langue:

english

Fichier:

PDF, 468 KB

english, 2005

19

[ECS 213th ECS Meeting - Phoenix, AZ (May 18 - May 23, 2008)] ECS Transactions - Analytical and Structural Investigations of the Metal-Enhanced Oxidation of Sic-MOS Structures

Lee, Unchul, Zheleva, Tsvetanka, Lelis, Aivars, Duscher, Gerd, Liu, Fude, Das, Mrinal, Scofield, James

Année:

2008

Langue:

english

Fichier:

PDF, 936 KB

english, 2008

20

Epitaxial Growth in Large Lattice Mismatch Systems: Characteristics of Domain Epitaxy

Zheleva, Tsvetanka S., Jagannadham, K., Narayan, J.

Journal:

MRS Proceedings

Année:

1992

Langue:

english

Fichier:

PDF, 2.07 MB

english, 1992

21

Epitaxial Growth of TiN on GaAs(100) by Pulsed Laser Deposition

Zheleva, Tsvetanka S., Jagannadham, K., Kumar, A., Narayan, J.

Journal:

MRS Proceedings

Année:

1992

Langue:

english

Fichier:

PDF, 1.96 MB

english, 1992

22

Textured Pb(Zr0.54Ti0.46)O3 Thin Films with YBa2Cu3O7-δ and Yttria-Stabilized Zirconia Buffer Layers on (001)Si

Zheleva, Tsvetanka, Tiwari, P., Narayan, J.

Journal:

MRS Proceedings

Année:

1993

Langue:

english

Fichier:

PDF, 2.79 MB

english, 1993

23

Pulsed Laser Deposition of Epitaxial (110) Tin Films on (100) Gaas - Processing, Characterization and Modeling

Zheleva, Tsvetanka, Jagannadham, K., Biunno, N., Narayan, J.

Journal:

MRS Proceedings

Année:

1993

Langue:

english

Fichier:

PDF, 1.00 MB

english, 1993

24

Lateral Epitaxy Formation Mechanism And Microstructure Of Selectively Grown Gan Structures

Zheleva, Tsvetanka, Nam, Ok-Hyun, Griffin, Jason D., Bremser, Michael D., Davis, Robert F.

Journal:

MRS Proceedings

Année:

1997

Langue:

english

Fichier:

PDF, 2.10 MB

english, 1997

25

Diluent Gas Effects on Properties of Ain and GaN Thin Films Grown by Metalorganic Vapor Phase Epitaxy on α(6H)-SiC Substrates

Hanser, Andrew, Wolden, Colin, Perry, William, Zheleva, Tsvetanka, Carlson, Eric, Hartlieb, Philip, Davis, Robert F.

Journal:

MRS Proceedings

Année:

1997

Langue:

english

Fichier:

PDF, 1.06 MB

english, 1997

26

Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures

Zheleva, Tsvetanka S., Smith, Scott A., Thomson, Darren B., Gehrke, Thomas, Linthicum, Kevin J., Rajagopal, Pradeep, Carlson, Eric, Ashmawi, Waeil M., Davis, Robert F.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 1.27 MB

english, 1998

27

Epitaxial Growth of Zinc-Blende Ain by Plasma Source Molecular Beam Epitaxy

Thompson, Margarita P., Auner, Gregory W., Drews, Andrew R., Zheleva, Tsvetanka S., Jones, Kenneth A.

Journal:

MRS Proceedings

Année:

1999

Langue:

english

Fichier:

PDF, 2.02 MB

english, 1999

28

The Stress Driven Rearrangement Instabilities in Electronic Materials and in Helium Crystals

Grinfeld, Michael, Grinfeld, Pavel, Kojima, Haruo, Little, John, Masutomi, Ryuichi, Persson, Per-Olof., Zheleva, Tsvetanka

Journal:

MRS Proceedings

Année:

2004

Langue:

english

Fichier:

PDF, 326 KB

english, 2004

29

SPIE Proceedings [SPIE Optoelectronics '99 - Integrated Optoelectronic Devices - San Jose, CA (Saturday 23 January 1999)] Photodetectors: Materials and Devices IV - Lateral epitaxial overgrowth for defect-free GaN substrates

Freitas, Jr., Jaime A., Saparin, Gennady V., Nam, Ok-Hyun, Zheleva, Tsvetanka S., Davis, Robert F., Brown, Gail J., Razeghi, Manijeh

Année:

1999

Langue:

english

Fichier:

PDF, 1.38 MB

english, 1999

30

Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO2 Structures using TEM and XPS

Taillon, Joshua, Gaskell, Karen, Liu, Gang, Feldman, Leonard, Dahr, Sarit, Zheleva, Tsvetanka, Lelis, Aivars, Salamanca-Riba, Lourdes

Journal:

Microscopy and Microanalysis

Année:

2015

Langue:

english

Fichier:

PDF, 18.49 MB

english, 2015

31

Analysis of the electronic and chemical structure in boron and phosphorus passivated 4H -SiC/SiO 2 interfaces using HRTEM and STEM-EELS

Taillon, Joshua A., Klingshirn, Christopher J., Jiao, Chunkun, Zheng, Yongju, Dhar, Sarit, Zheleva, Tsvetanka S., Lelis, Aivars J., Salamanca-Riba, Lourdes G.

Journal:

Applied Physics Letters

Année:

2018

Langue:

english

Fichier:

PDF, 1.26 MB

english, 2018

32

In Situ SEM Observations and Electrical Measurements During the Annealing of Si/Ni Contacts to SiC

Ervin, Matthew H., Jones, Kenneth A., Derenge, Michael A., Zheleva, Tsvetanka S., Wood, Mark C.

Journal:

MRS Proceedings

Année:

2003

Fichier:

PDF, 1.11 MB

2003

33

Electronic materials research for energy and power applications

Zheleva, Tsvetanka S, Shaffer, Edward C

Journal:

Nano Research & Applications

Année:

2018

Fichier:

PDF, 150 KB

2018

34

Electron beam-induced crystallization of Al2O3 gate layer on Î²-Ga2O3 MOS capacitors

Klingshirn, Christopher J., Jayawardena, Asanka, Dhar, Sarit, Ramamurthy, Rahul P., Morisette, Dallas, Warecki, Zoey, Cumings, John, Zheleva, Tsvetanka, Lelis, Aivars, Salamanca-Riba, Lourdes G.

Journal:

Année:

2020

Fichier:

PDF, 3.88 MB

2020